32GB DDR4 3200MT/s ECC Registered DIMM CL22 2Rx8 1.2V 288-pin 16Gbit Hynix D

Key Features

• Power Supply: VDD = 1.2V
• VDDQ = 1.2V
• VPP = 2.5V
• VDDSPD = 2.41V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported

Description

Kingston's KSM32RD8/32HD is a 4G x 72-bit (32GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/
parity, 2Rx8, ECC, memory module, based on eighteen 2G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.

Specifications

Power
Memory voltage	1.2 V
Design
JEDEC standard	Yes
Memory
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	Server
Memory form factor	288-pin DIMM
CAS latency	22
Memory voltage	1.2 V
Module configuration	4096M x 72
Row cycle time	45.75 ns
Row active time	32 ns
SPD profile	Yes
Memory ranking	2
ECC	Yes
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V
Features
Buffered memory type	Registered (buffered)
Memory layout (modules x size)	1 x 32 GB
Internal memory	32 GB
Component for	Server
Memory form factor	288-pin DIMM
CAS latency	22
Memory voltage	1.2 V
Module configuration	4096M x 72
Row cycle time	45.75 ns
Row active time	32 ns
SPD profile	Yes
Memory ranking	2
ECC	Yes
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V
JEDEC standard	Yes
Memory data transfer rate	3200 MT/s
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Technical details
Compliance certificates	RoHS
Sustainability
Compliance certificates	RoHS
Weight & dimensions
Width	133.3 mm
Height	31.2 mm