ValueRam

Key Features

• JEDEC 1.5V Power Supply
• VDDQ = 1.5V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal banks
• Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
• Bi-directional Differential Data Strobe
• Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
• Asynchronous Reset
• PCB: Height 1.180” (30.00mm), double sided component

Description

Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.

Specifications

Memory
Package type	SO-DIMM
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Memory ranking	1
ECC	No
Internal memory type	DDR3
Power
Memory voltage	1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
Memory ranking	1
ECC	No
Internal memory type	DDR3
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Package type	SO-DIMM
Packaging data
Package type	SO-DIMM
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020